Defects and Impurities in Silicon Materials

Defects and Impurities in Silicon Materials

An Introduction to Atomic-Level Silicon Engineering

Langouche, Guido; Yoshida, Yutaka

Springer Verlag, Japan

03/2016

487

Mole

Inglês

9784431557999

15 a 20 dias

8465

Descrição não disponível.
Diffusion and point defects in silicon materials.- Density functional modeling of defects and impurities in silicon materials.- Electrical and optical defect evaluation techniques for electronic and solar grade silicon.- Intrinsic point defect engineering during single crystal Si and Ge growth from a melt.- Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells.- Oxygen precipitation in silicon.- Defect characterization by electron beam induced current and cathode luminescence methods.- Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators.- Defect Engineering in silicon materials.
Atomistic Insights into Defects and Impurities;Atomistic Scale Modeling Techniques;Computer Simulation of Crystal Growth;Defect Engineering in Silicon Materials;Density Functional Theory;Electron Beam Induced Current Characterization;Silicon Defect Analysis;Silicon Imprriies Analysis;Solar Grade Si Wafers;The Physical Principles of Semiconductor Devices