Nanoscale Redox Reaction at Metal/Oxide Interface
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portes grátis
Nanoscale Redox Reaction at Metal/Oxide Interface
A Case Study on Schottky Contact and ReRAM
Nagata, Takahiro
Springer Verlag, Japan
05/2020
89
Mole
Inglês
9784431548492
15 a 20 dias
454
Descrição não disponível.
General introduction.- Changes in Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal ZnO.- Surface passivation effect on Schottky contact formation of oxide semiconductors.- Bias-induced interfacial redox reaction in oxide-based resistive random access memory structure.- Switching control of oxide-based resistive random access memory by valence state control of oxide.- Combinatorial thin film synthesis for new nanoelectronics materials.- General summary.
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Combinatorial Synthesis;Metal/oxide Interface;Plasma Surface Treatment;Resistive Random Access Memory;Schottky Contact;Surface Electron Accumulation Layer;X-ray Photoelectron Spectroscopy;X-ray Reflectometry
General introduction.- Changes in Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal ZnO.- Surface passivation effect on Schottky contact formation of oxide semiconductors.- Bias-induced interfacial redox reaction in oxide-based resistive random access memory structure.- Switching control of oxide-based resistive random access memory by valence state control of oxide.- Combinatorial thin film synthesis for new nanoelectronics materials.- General summary.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
