Power GaN Devices
-15%
portes grátis
Power GaN Devices
Materials, Applications and Reliability
Zanoni, Enrico; Meneghini, Matteo; Meneghesso, Gaudenzio
Springer International Publishing AG
04/2018
380
Mole
Inglês
9783319827568
15 a 20 dias
6626
Descrição não disponível.
1 Properties and advantages of gallium nitride; Daisuke Ueda.- 2 Substrate issues and epitaxial growth; Stacia Keller.- 3 GaN-on-Silicon CMOS compatible process; Denis Marcon.- 4 Lateral GaN-based power devices; Umesh Mishra.- 5 GaN-based vertical transistors; Srabanti Chowduri.- 6 GaN-based nanowire transistors; Tomas Palacios.- 7 Deep level characterization: electrical and optical methods; Robert Kaplar.- 8 Modeling of GaN HEMTs: from device-level simulation to virtual prototyping; Gilberto Curatola, Giovanni Verzellesi.- 9 Performance-limiting defects in GaN-based HEMTs: from surface states to common impurities; Bisi, Rossetto, De Santi, Meneghini, Meneghesso, Zanoni.- 10 Cascode configuration for normally-off devices; Primit Parikh.- 11 Gate injection transistors: E-mode operation and conductivity modulation; Tetsuso Ueda.- 12 Fluorine implanted E-mode transistors; Kevin Chen.- 13 Drift effects in GaN HV power transistors; Joachim Wuerfl.- 14 Reliability Aspects of 650V rated GaN Power Devices; P. Moens, A. Banerjee.- 15 Switching Characteristics of Gallium-Nitride Transistors: system level issues; Fred Lee, Qiang Li, Xiucheng Huang and Zhengyang Liu.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
GaN-based nanowire transistors;GaN-based power transistors;GaN-based vertical transistors;Gallium nitride on silicon (GaN-on-Si);Gallium nitride power transistors;Lateral GaN-based power devices;Nanowire-based HEMTs;Normally-off devices;Power GaN device reliability;Single and double heterostructure devices
1 Properties and advantages of gallium nitride; Daisuke Ueda.- 2 Substrate issues and epitaxial growth; Stacia Keller.- 3 GaN-on-Silicon CMOS compatible process; Denis Marcon.- 4 Lateral GaN-based power devices; Umesh Mishra.- 5 GaN-based vertical transistors; Srabanti Chowduri.- 6 GaN-based nanowire transistors; Tomas Palacios.- 7 Deep level characterization: electrical and optical methods; Robert Kaplar.- 8 Modeling of GaN HEMTs: from device-level simulation to virtual prototyping; Gilberto Curatola, Giovanni Verzellesi.- 9 Performance-limiting defects in GaN-based HEMTs: from surface states to common impurities; Bisi, Rossetto, De Santi, Meneghini, Meneghesso, Zanoni.- 10 Cascode configuration for normally-off devices; Primit Parikh.- 11 Gate injection transistors: E-mode operation and conductivity modulation; Tetsuso Ueda.- 12 Fluorine implanted E-mode transistors; Kevin Chen.- 13 Drift effects in GaN HV power transistors; Joachim Wuerfl.- 14 Reliability Aspects of 650V rated GaN Power Devices; P. Moens, A. Banerjee.- 15 Switching Characteristics of Gallium-Nitride Transistors: system level issues; Fred Lee, Qiang Li, Xiucheng Huang and Zhengyang Liu.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
GaN-based nanowire transistors;GaN-based power transistors;GaN-based vertical transistors;Gallium nitride on silicon (GaN-on-Si);Gallium nitride power transistors;Lateral GaN-based power devices;Nanowire-based HEMTs;Normally-off devices;Power GaN device reliability;Single and double heterostructure devices
